RESEARCH
Ferroelectric Memory
Ferroelectric Memory (강유전체 메모리)
Objective : Development of HfxZr1-xO2(HZO) ferroelectric films, MFM structure and Memory Devices
(1) Preparation of HZO films by Plasma-enhanced Atomic Layer Deposition(PEALD)
(2) Electrical characterization of MFM structures with modified processing
(3) Suggestion of next-generation ferroelectric memory devices
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