LECTURE

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Field Effect Transistors

6. Field Effect Transistors

2025-01-21
Junctions

5. Junctions

2025-01-21
Excess Carriers in Semiconductors

4. Excess Carriers in Semiconductors

2025-01-21

PUBLICATIONS

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W.J.Park, H.J.Kim, J.H.Lee, J.H.Kim, J.H.Kim, S.H.Uhm, S.W.Kim, H.C.Lee; Characterization of HZO Films Fabricated by Co-Plasma Atomic Layer Deposition for Ferroelectric Memory Applications, Nanomaterials. 14(2024) 1801
W.J.Park, H.J.Kim, J.H.Lee, J.H.Kim, J.H.Kim, S.H.Uhm, S.W.Kim, H.C.Lee; Characterization of HZO Films Fabricated by Co-Plasma Atomic Layer Deposition for Ferroelectric Memory Applications, Nanomaterials. 14 (2024) 1801 
S.W.Kim, J.H.Yoo, W.J.Park, C.H.Lee, J.H.Lee, J.H.Kim, S.H.Uhm, H.C.Lee; Enhancing Charge Trapping Performance of Hafnia Thin Films Using Sequential Plasma Atomic Layer Deposition, Nanomaterials. 14(2024) 1686
S.W.Kim, J.H.Yoo, W.J.Park, C.H.Lee, J.H.Lee, J.H.Kim, S.H.Uhm, H.C.Lee; Enhancing Charge Trapping Performance of Hafnia Thin Films Using Sequential Plasma Atomic Layer Deposition, Nanomaterials. 14 (2024) 1686
S.W.Kim, H.S.Lee, D.S.Jun, S.E.Lee, J.H.Lee, H.C.Lee; Enhancing the Plasma-Resistance Properties of Li2O?Al2O3?SiO2 Glasses for the Semiconductor Etch Process via Alkaline Earth Oxide Incorporation, Materials. 16 (2023) 5112
S.W.Kim, H.S.Lee, D.S.Jun, S.E.Lee, J.H.Lee, H.C.Lee; Enhancing the Plasma-Resistance Properties of Li2O-Al2O3-SiO2 Glasses for the Semiconductor Etch Process via Alkaline Earth Oxide Incorporation, Materials. 16 (2023) 5112 
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